2SC5511
Transistors
For Audio Amplifier output - TV Velosity
Modulation (160V, 1.5A)
2SC5511
Structure
NPN Silicon Epitaxial Planar Transistor
External dimensions
(Unit : mm)
TO-220FN
10.0
4.5
蠁
3.2
2.8
Features
1) Electrical characteristics of DC current gain h
FE
is flat.
2) High breakdown voltage. (BV
CEO
=160V(Min.), at I
C
=1mA)
3) High f
T
. (Typ. 150MHz, at V
CE
=10V, I
E
=
鈭?.2A,
f=100MHz)
4) Wide SOA.
(1)Base
(2)Collector
(3)Emitter
15.0
12.0
8.0
5.0
1.2
1.3
14.0
0.8
2.54
(1) (2) (3)
2.54
0.75
2.6
Applications
Power amplifier
Velosity modulation
Complements
PNP
2SA2005
NPN
2SC5511
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
160
160
5
1.5
3
2
20
150
鈭?5
to
+150
Unit
V
V
V
A
A
鈭?
Packaging specifications and h
FE
Package
Type
h
FE
2SC5511
E
Code
Basic ordering unit (pieces)
Taping
鈭?/div>
500
h
FE
values are classified as follows:
Item
h
FE
E
100 to 200
Collector power dissipation
Junction temperature
Storage temperature
鈭?
t=100ms
W(Ta=25
擄C)
W(Tc=25擄C)
擄C
擄C
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min. Typ. Max. Unit
160
160
5
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
100
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
150
20
鈭?/div>
鈭?/div>
鈭?/div>
1.0
1.0
1.0
1.5
200
鈭?/div>
鈭?/div>
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
鈭?/div>
pF
I
C
=1mA
I
C
=50碌A(chǔ)
I
E
=50碌A(chǔ)
V
CB
=160V
V
EB
=4V
I
C
/I
B
=1A/0.1A
I
C
/I
B
=1A/0.1A
V
CE
=5V, I
C
=0.1A
V
CB
=10V , I
E
=0A , f=1MHz
Conditions
MHz V
CE
=10V, I
E
=鈭?.2A , f=100MHz
1/1
2SC5511 PDF文件相關(guān)型號
2SC5658
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