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2SC5509-T2 Datasheet

  • 2SC5509-T2

  • NPN SILICON RF TRANSISTOR

  • 15頁(yè)

  • NEC   NEC

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DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5509
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER
鈰?/div>
LOW NOISE
鈰?/div>
HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES
鈥?Ideal for medium output power amplification
鈥?NF = 1.2 dB TYP., G
a
= 12 dB TYP. @ V
CE
= 2 V, I
C
= 10 mA, f = 2 GHz
鈥?Maximum available power gain: MAG = 14 dB TYP. @ V
CE
= 2 V, I
C
= 50 mA, f = 2 GHz
鈥?f
T
= 25 GHz technology adopted
鈥?Flat-lead 4-pin thin-type super minimold package
ORDERING INFORMATION
Part Number
2SC5509
2SC5509-T2
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
鈥?8 mm wide embossed taping
鈥?Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25擄C)
擄
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
15
3.3
1.5
100
190
150
鈭?5
to +150
Unit
V
V
V
mA
mW
擄C
擄C
T
j
T
stg
Note
Free Air
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10009EJ01V0DS (1st edition)
Date Published October 2001 CP(K)
Printed in Japan
漏
NEC Compound Semiconductor Devices 2001

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