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2SC5455 Datasheet

  • 2SC5455

  • NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD

  • 12頁(yè)

  • NEC   NEC

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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5455
NPN EPITAXIAL SILICON TRANSISTOR
4-PIN MINI MOLD
FEATURE
鈥?Ideal for medium-output applications
鈥?High gain, low noise
鈥?Small reverse transfer capacitance
鈥?Can operate at low voltage
PACKAGE DIMENSIONS (in mm)
0.4
鈥?.05
1.5
鈥?.1
+0.2
2
2.9 鹵 0.2
(1.8)
0.85 0.95
3
4
5擄
5擄
5擄
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
9
6
2
100
200
150
鈥?5 to +150
UNIT
V
1
0.6
鈥?.05
1.1
鈥?.1
0.8
+0.2
V
V
mA
mW
擄C
擄C
0 to 0.1
5擄
ELECTRICAL CHARACTERISTICS (T
A
= 25
擄
C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
|S
21e
|
2
NF
TEST CONDITIONS
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 3 V, I
C
= 30 mA
Note 1
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 3 V, I
C
= 30 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
PIN CONNECTIONS
1: Collector
2: Emitter
3: Base
4: Emitter
MIN.
TYP.
MAX.
0.1
0.1
0.16
+0.1
鈥?.06
0.4
鈥?.05
+0.1
+0.1
(1.9)
0.4
鈥?.05
+0.1
+0.1
2.8
鈥?.3
+0.2
UNIT
碌
A
碌
A
75
12.0
0.5
8.0
10.0
1.5
150
GHz
0.7
pF
dB
2.5
dB
Notes 1.
Pulse measurement P
W
鈮?/div>
350
碌
s, duty cycle
鈮?/div>
2 %
2.
Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13081EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
漏
1998

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