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2SC5437 Datasheet

  • 2SC5437

  • NEC [NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LO...

  • NEC   NEC

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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5437
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
鈥?Ultra super mini-mold thin flat package
(1.4 mm
脳
0.8 mm
脳
0.59 mm: TYP.)
鈥?Contains same chip as 2SC5195
PACKAGE DIMENSIONS (in mm)
1.4 鹵 0.05
0.8 鹵 0.1
1.4 鹵 0.1
(0.9)
0.45 0.45
0.2
+0.1
鈥?
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
9
6
2
100
125
150
鈥?5 to +150
UNIT
V
V
TS
3
1
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS (T
A
= 25
擄
C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Reverse Transfer Capacitance
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure (1)
Noise Figure (2)
SYMBOL
I
CBO
I
EBO
h
FE
C
re
f
T
(1)
f
T
(2)
|S
21e
|
2
(1)
|S
21e
|
2
(2)
NF (1)
NF (2)
TEST CONDITIONS
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 3 mA
Note 1
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Note 2
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
MIN.
TYP.
MAX.
100
100
UNIT
nA
nA
80
0.7
4.0
5.0
9.5
3.0
4.0
8.0
1.9
1.7
145
0.8
pF
GHz
GHz
dB
dB
2.5
dB
dB
Notes 1.
Pulse measurement P
W
鈮?/div>
350
碌
s, duty cycle
鈮?/div>
2 %
2.
Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.
Document No. P13146EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
漏
0.15
+0.1
鈥?.05
mA
0.59 鹵 0.05
V
0.3
+0.1
鈥?
2
1998

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