Ordering number : EN5762
NPN Triple Diffused Planar Silicon Transistor
2SC5420
Inverter Lighting Applications
Features
鈥?High breakdown voltage (VCBO=1000V).
鈥?High reliability (Adoption of HVP process).
鈥?Adoption of MBIT process.
Package Dimensions
unit: mm
2069B-SMP-FD
[2SC5420]
10.2
4.5
1.3
8.8
1.2
0.8
1
2
3
2.7
0.4
3.0
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25擄C
Tj
Tstg
Conditions
2.55
2.55
Ratings
1000
450
9
5
10
1.75
50
150
鈥?5 to +150
1.2
1 : Base
2 : Collector
3 : Emitter
SANYO : SMP-FD
Unit
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Storage Time
Fall Time
Symbol
ICBO
ICES
VCEO(SUS)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
Conditions
VCB=450V, IE=0
VCE=1000V, RBE=0
IC=100mA, IB=0
VEB=9V, IC=0
IC=2.5A, IB=0.5A
IC=2.5A, IB=0.5A
VCE=5V, IC=0.3A
VCE=5V, IC=2.0A
IC=2.5A, IB1=0.5A, IB2=鈥?.0A
IC=2.5A, IB1=0.5A, IB2=鈥?.0A
Ratings
min
typ
max
10
1.0
1.0
1.0
1.5
50
2.5
0.15
Unit
碌A
mA
V
mA
V
V
450
30
10
40
碌s
碌s
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-1037 No.5762-1/4
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