Ordering number : EN5817
NPN Triple Diffused Planar Silicon Transistor
2SC5417
Inverter Lighting Applications
Features
鈥?High breakdown voltage.
鈥?High reliability (Adoption of HVP process).
鈥?Adoption of MBIT process.
Package Dimensions
unit: mm
2079B-TO220FI (LS)
[2SC5417]
10.0
3.5
3.2
7.2
4.5
2.8
16.1
16.0
0.9
1.2
14.0
3.6
0.75
1
2
3
Specifications
Absolute Maximum Ratings
at Ta=25擄C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tc=25擄C
Tj
Tstg
Conditions
2.55
2.55
1 : Base
2 : Collector
3 : Emitter
SANYO : TO220FI (LS)
2.4
Ratings
1200
600
9
3
6
2
25
150
鈥?5 to +150
0.6
0.7
Unit
V
V
V
A
A
W
W
擄C
擄C
Electrical Characteristics
at Ta=25擄C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Sustain Voltage
Emitter Cutoff Current
C-E Saturation Voltage
B-E Saturation Voltage
DC Current Gain
Storage Time
Fall Time
Symbol
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
hFE(1)
hFE(2)
tstg
tf
Conditions
VCB=600V, IE=0
VCE=1200V, RBE=0
IC=100mA, IB=0
VEB=9V, IC=0
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
VCE=5V, IC=0.1A
VCE=5V, IC=1.0A
IC=1.5A, IB1=0.3A, IB2=鈥?.6A
IC=1.5A, IB1=0.3A, IB2=鈥?.6A
Ratings
min
typ
max
10
1.0
1.0
1.0
1.5
50
2.5
0.15
Unit
碌A(chǔ)
mA
V
mA
V
V
600
30
10
40
碌s
碌s
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
51598TS (KOTO) TA-1043 No.5817-1/4
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