Power Transistors
2SC5413
Silicon NPN triple diffusion mesa type
For horizontal deflection output
20.0鹵0.5
Unit: mm
蠁
3.3鹵0.2
5.0鹵0.3
3.0
6.0
s
Features
q
q
q
1.5
1.5
20.0鹵0.5
2.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
1700
1700
600
5
30
20
10
200
3.5
150
鈥?5 to +150
Unit
V
V
V
V
A
A
A
W
藲C
藲C
2.0鹵0.3
3.0鹵0.3
1.0鹵0.2
2.7鹵0.3
0.6鹵0.2
5.45鹵0.3
10.9鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
TOP鈥?L Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1700V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10A
I
C
= 10A, I
B
= 2.8A
I
C
= 10A, I
B
= 2.8A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 12A, I
B1
= 2.4A, I
B2
= 鈥?.8A
3
4.0
0.3
7
min
typ
max
50
1
50
14
3
1.5
V
V
MHz
碌s
碌s
Unit
碌A(chǔ)
mA
碌A(chǔ)
2.0
1.5
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
26.0鹵0.5
10.0
2.0
4.0
3.0
1
1
