Power Transistors
2SC5410, 2SC5410A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
20.0鹵0.5
Unit: mm
蠁
3.3鹵0.2
5.0鹵0.3
3.0
6.0
s
Features
q
q
q
1.5
1.5
20.0鹵0.5
2.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
1500
1500
600
5
30
25
15
200
3.5
150
鈥?5 to +150
Unit
V
V
V
V
A
A
A
W
藲C
藲C
2.0鹵0.3
3.0鹵0.3
1.0鹵0.2
2.7鹵0.3
0.6鹵0.2
5.45鹵0.3
10.9鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
TOP鈥?L Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
2SC5410
2SC5410A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 12A
I
C
= 12A, I
B
= 3A
I
C
= 12A, I
B
= 3A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 12A, I
B1
= 3A, I
B2
= 鈥?A
3
4.0
0.3
8
min
typ
max
50
1
50
16
3
1.5
V
V
MHz
碌s
碌s
Unit
碌A(chǔ)
mA
碌A(chǔ)
2.0
1.5
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
26.0鹵0.5
10.0
2.0
4.0
3.0
1
1
2
