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PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5409

NPN EPITAXIAL SILICON TRANSISTOR

FOR MICROWAVE HIGH-GAIN AMPLIFICATION

FEATURE

鈥?High f

T

16 GHz TYP.

鈥?High gain

|S

21e

|

2

= 14 dB TYP.

@f = 2 GHz, V

CE

= 2 V, I

C

= 20 mA

鈥?NF = 1.1 dB, @f = 2 GHz V

CE

= 2 V, I

C

= 3 mA

鈥?6-pin Small Mini Mold Package

PACKAGE DIMENSIONS (in mm)

2.1鹵0.1

1.25鹵0.1

0.2

+0.1

鈥?

0.15

+0.1

鈥?

1.3

0.65 0.65

2.0鹵0.2

E

ORDERING INFORMATION

PART NUMBER

2SC5409-T1

QUANTITY

3 kpcs/reel

PACKING STYLE

8-mm wide emboss taping, 6-pin

(collector) feed hole direction

0.9鹵0.1

B

0.7

Remark

To order evaluation samples, consult your NEC sales person-

nel (supported in 50-pcs units).

ABSOLUTE MAXIMUM RATINGS

PIN CONNECTIONS

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

RATING

5

3

2

30

90

150

鈥?5 to +150

UNIT

V

V

V

mA

mW

擄C

擄C

E: Emitter

C: Collector

B: Base

Because this product uses high-frequency process, avoid excessive input of static electricity, etc.

Document No. P12096EJ1V0DS00 (1st edition)

Date Published April 1997 N

Printed in Japan

0 to 0.1

漏

E

E

C

E

T97

1997

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