Power Transistors
2SC5405
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
Unit: mm
s
Features
q
q
9.9鹵0.3
3.0鹵0.5
4.6鹵0.2
2.9鹵0.2
q
High-speed switching
High forward current transfer ratio h
FE
which has satisfactory
linearity
Dielectric breakdown voltage of the package: > 5kV
(T
C
=25藲C)
Ratings
80
50
6
6
3
1
20
2.0
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
藲C
藲C
15.0鹵0.5
蠁3.2鹵0.1
13.7鹵0.2
4.2鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
1.4鹵0.2
1.6鹵0.2
0.8鹵0.1
2.6鹵0.1
0.55鹵0.15
1
2
2.54鹵0.3
3 5.08鹵0.5
1:Base
2:Collector
3:Emitter
TO鈥?20D Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
I
C
= 1A, I
B1
= 0.05A, I
B2
= 鈥?0.1A,
V
CC
= 50V
75
0.3
3.5
0.9
Conditions
V
CB
= 80V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.5A
I
C
= 2A, I
B
= 0.05A
50
500
0.5
1500
0.7
V
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
100
Unit
碌A
碌A
碌A
V
*
h
FE
Rank classification
P
Q
Rank
h
FE
800 to 1500 500 to 1000
1
1
2
