Power Transistors
2SC5393
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
0.7鹵0.1
10.0鹵0.2
5.5鹵0.2
2.7鹵0.2
4.2鹵0.2
Unit: mm
4.2鹵0.2
s
Features
q
q
q
q
q
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
600
600
400
7
10
5
1
40
2
150
鈥?5 to +150
Unit
V
V
V
V
A
A
A
W
藲C
藲C
7.5鹵0.2
16.7鹵0.3
蠁3.1鹵0.1
4.0
1.4鹵0.1
1.3鹵0.2
14.0鹵0.5
Solder Dip
0.5
+0.2
鈥?.1
0.8鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
2.54鹵0.25
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO鈥?20 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 600V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 1.5A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 2A, I
B1
= 0.4A, I
B2
= 鈥?0.8A,
V
CC
= 150V
30
2.0
0.3
10
8
1
2
V
V
MHz
碌s
碌s
min
typ
max
100
100
60
Unit
碌A(chǔ)
碌A(chǔ)
1
1
2
