Power Transistors
2SC5392
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s
Features
q
q
q
q
q
9.9鹵0.3
3.0鹵0.5
4.6鹵0.2
2.9鹵0.2
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
Dielectric breakdown voltage of the package: > 5kV
(T
C
=25藲C)
Ratings
800
800
500
8
3.0
1.5
0.5
25
2.0
150
鈥?5 to +150
Unit
V
V
V
V
A
A
A
W
藲C
藲C
15.0鹵0.5
蠁3.2鹵0.1
13.7鹵0.2
4.2鹵0.2
1.4鹵0.2
1.6鹵0.2
0.8鹵0.1
2.6鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
0.55鹵0.15
1
2
2.54鹵0.3
3 5.08鹵0.5
1:Base
2:Collector
3:Emitter
TO鈥?20D Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 0.6A
I
C
= 0.6A, I
B
= 0.17A
I
C
= 0.6A, I
B
= 0.17A
V
CE
= 10V, I
C
= 0.1A, f = 1MHz
I
C
= 0.6A, I
B1
= 0.17A, I
B2
= 鈥?0.34A,
V
CC
= 200V
20
1.0
3.0
0.3
500
15
8
1.0
1.5
V
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
Unit
碌A(chǔ)
碌A(chǔ)
V
1
1
2
