Transistor
2SC5378
Silicon NPN epitaxial planer type
For low-voltage low-noise high-frequency oscillation
Unit: mm
s
q
q
q
q
2.1鹵0.1
Features
Low noise figure NF.
High gain.
High transition frequency f
T
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
0.425
1.25鹵0.1
0.425
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.2
0.9鹵0.1
(Ta=25藲C)
Ratings
15
8
2
80
150
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
0 to 0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
0.7鹵0.1
s
Absolute Maximum Ratings
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
HT
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Noise figure
Foward transfer gain
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE*1
C
ob
f
T
NF
| S
21e
|
2
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 5V, I
C
= 10mA
V
CB
= 5V, I
E
= 0, f = 1MHz
V
CE
= 5V, I
C
= 10mA, f = 2GHz
V
CE
= 5V, I
C
= 3mA, f = 1GHz
V
CE
= 5V, I
C
= 10mA, f = 1GHz
8.5
80
0.6
7
1.6
11
2
min
typ
max
1
1
200
1
pF
GHz
dB
dB
Unit
碌A(chǔ)
碌A(chǔ)
*1
h
FE
Rank classification
Q
80 ~ 115
R
95 ~ 155
S
135 ~ 200
Rank
h
FE
0.15
鈥?.05
+0.1
0.3
鈥?
+0.1
1
1
2
