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PRELIMINARY DATA SHEET

SILICON TRANSISTOR

2SC5369

NPN EPITAXIAL SILICON TRANSISTOR FOR

MICROWAVE AMPLIFICATION

FEATURES

鈥?High f

T

14 GHz TYP.

鈥?High gain

| S

21

e |

2

PACKAGE DIMENSION (in mm)

2.1鹵0.1

1.25鹵0.1

0.2

鈥?

+0.1

= 14 dB TYP.

1

0.65 0.65

2.0鹵0.2

6

4

5

@f = 2 GHz, V

CE

= 3 V, I

C

= 10 mA

1.3

鈥?NF = 1.3 dB, @f = 2 GHz, V

CE

= 3 V, I

C

= 3 mA

鈥?6-pin small mini mold package

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄

C)

0.9鹵0.1

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

T

T

I

T

stg

RATING

9

6

2

30

150

150

鈥?5 to +150

UNIT

V

V

V

mA

mW

擄C

擄C

0.7

3

2

PIN CONNECTIONS

1. Emitter

2. Emitter

3. Base

4. Emitter

5. Emitter

6. Collector

Document No. P11644EJ1V0DS00 (1st edition)

Date Published September 1996 P

Printed in Japan

0 to 0.1

漏

0.15

鈥?

+0.1

1996

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