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2SC5336 Datasheet

  • 2SC5336

  • NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTI...

  • 6頁

  • NEC   NEC

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PRELIMINARY DATA SHEET
Silicon Transistor
2SC5336
NPN EPITAXIAL SILICON TRANSISTOR
HIGH FREQUENCY LOW DISTORTION AMPLIFIER
FEATURES
鈥?/div>
PACKAGE DIMENSIONS
(in millimeters)
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
鈥?/div>
High gain
2
| S
21
| = 12 dB TYP, @f = 1 GHz, V
CE
= 10 V, Ic = 20 mA
New power mini-mold package version of a 4-pin type
gain-improved on the 2SC3357
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 擄C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
Note1
P
T
Rating
20
12
3.0
100
1.2
150
鈥?5 to +150
Unit
0.8MIN.
C
E
B
E
V
V
V
mA
W
擄C
擄C
0.42
鹵0.06
1.5
3.0
0.46
鹵0.06
0.42
鹵0.06
3.95鹵0.25
2.45鹵0.1
0.25鹵0.02
T
j
T
stg
Note 1.
0.7 mm
脳
16 cm double sided ceramic substrate (Copper plating)
ELECTRICAL CHARACTERISTICS (T
A
= 25
擄
C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-back Capacitance
Insertion Power Gain
Noise Figure
Noise Figure
Symbol
I
CB0
I
EB0
h
FE
f
T
C
re
| S
21e
|
NF
NF
2
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
Test Conditions
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
Note3
Note2
MIN.
TYP.
MAX.
1.0
1.0
Unit
碌
A
碌
A
50
120
6.5
0.5
12.0
1.1
1.8
250
GHz
0.8
pF
dB
dB
3.0
dB
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 40 mA, f = 1.0 GHz
Notes 2.
Pulse measurement : PW
鈮?/div>
350
碌
S, Duty Cycle
鈮?/div>
2 %
3.
Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank
Marking
h
FE
RH
RH
50 to 100
RF
RF
80 to 160
RE
RE
125 to
250
Document No. P10938EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
漏
1996

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