Ordering number:EN5883
NPN Triple Diffused Planar Silicon Transistor
2SC5304
Inverter Lighting Applications
Features
路 High breakdown voltage (VCBO=1000V).
路 High reliability (Adoption of HVP process).
路 Adoption of MBIT process.
Package Dimensions
unit:mm
2079B
[2SC5304]
10.0
3.5
4.5
2.8
3.2
7.2
16.1
16.0
0.9
1.2
14.0
3.6
0.75
1
2
3
2.55
2.55
2.4
SANYO:TO-220FI (LS)
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Conditions
Ratings
1000
450
9
7
14
2
Unit
V
V
V
A
A
W
W
0.6
0.7
1:Base
2:Collector
3:Emitter
Tc=25藲C
Tj
Tstg
35
150
鈥?5 to +150
藲C
藲C
Electrical Characteristics
at Ta=25藲C
Parameter
Collector Cutoff Current
Collector Cutoff Current
Collector Saturation Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Storage Time
Fall Time
Symbol
ICBO
ICES
VCB=450V, IE=0
VCE=1000V, RBE=0
450
1.0
1.0
1.5
30
10
2.5
0.15
碌s
碌s
40
50
Conditons
Ratings
min
typ
max
10
1.0
Unit
碌A(chǔ)
mA
V
mA
V
V
VCEO(sus) IC=100mA, IB=0
IEBO
VEB=9V, IC=0
VCE(sat) IC=3.5A, IB=0.7A
VBE(sat)
hFE1
hFE2
tstg
tf
IC=3.5A, IB=0.7A
VCE=5V, IC=0.3A
VCE=5V, IC=3.0A
IC=3.5A, IB1=0.7A, IB2=鈥?.4A
IC=3.5A, IB1=0.7A, IB2=鈥?.4A
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61598TS (KOTO) TA-1238 No.5883-1/3
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