鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
15
10
2
65
125
125
鈭?5
to
+125
Unit
V
V
V
mA
mW
擄C
擄C
0.70
+0.05
鈥?.03
5藲
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: 3S
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Foward transfer gain
Maximum unilateral power gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
錚
21e
錚?/div>
2
G
UM
NF
Conditions
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
8 V, I
C
=
20 mA
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
15 mA, f
=
1.5 GHz
V
CE
=
8 V, I
C
=
7 mA, f
=
1.5 GHz
7
50
7.0
8.5
0.6
9
10
2.2
3.0
1.0
Min
Typ
Max
1
1
170
Unit
碌A(chǔ)
碌A(chǔ)
錚?/div>
GHz
pF
dB
dB
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
50 to 120
R
100 to 170
0.10 max.
(0.375)
Publication date: December 2002
SJC00283BED
1
1
2
3
