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DATA SHEET

SILICON TRANSISTOR

2SC5288

NPN SILICON EPITAXIAL TRANSISTOR

FOR L-BAND LOW-POWER AMPLIFIER

The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital

cordless phones (DECT, PHS, etc.).

PACKAGE DRAWING

(Unit: mm)

0.4

+0.1

鈥?.05

2.8

+0.2

鈥?.3

1.5

+0.2

鈥?.1

2

3

FEATURES

鈥?P

鈥?

= 24 dBm TYP.

@f = 1.9 GHz, V

CC

= 3.6 V, I

Cq

= 1 mA (Class AB), Duty = 1/8

2.9鹵0.2

(1.8)

0.85 0.95

EIAJ: SC-61

1

0.6

+0.1

鈥?.05

Part Number

2SC5288-T1

Quantity

3 Kpcs/Reel

Packing Style

Embossed tape 8 mm wide.

Pin 3 (Base), Pin 4 (Emitter) face

to perforation side of the tape.

1.1

+0.2

鈥?.1

5擄

5擄

0 to 0.1

Remark

If you require an evaluation sample, please contact an NEC Sales

Representative. (Unit sample quantity is 50 pcs.)

5擄

5擄

ABSOLUTE MAXIMUM RATINGS (T

A

= 25

擄

C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

T

Rating

9.0

6.0

2.0

150

200 (CW)

1.0 (duty = 1/8)

Note

2.5 (duty = 1/24)

Note

Junction Temperature

Storage Temperature

T

j

T

stg

150

鈥?5 to +150

Unit

V

V

V

mA

mW

W

W

藲C

藲C

PIN CONNECTIONS

1. Collector

2. Emitter

3. Base

4. Emitter

Note

Pulse period is 10 msec or less.

Document No. P10249EJ2V0DS00 (2nd edition)

Date Published December 1995 P

Printed in Japan

漏

0.16

+0.1

鈥?.06

0.8

0.4

+0.1

鈥?.05

ORDERING INFORMATION

4

(1.9)

鈥?4-Pin Mini Mold Package

0.4

+0.1

鈥?.05

T-89

1995

next

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