Power Transistors
2SC5244, 2SC5244A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
20.0鹵0.5
Unit: mm
蠁
3.3鹵0.2
5.0鹵0.3
3.0
6.0
s
Features
q
q
q
1.5
1.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SC5244
2SC5244A
2SC5244
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
T
j
T
stg
20.0鹵0.5
2.5
2.0鹵0.3
3.0鹵0.3
1.0鹵0.2
(T
C
=25藲C)
Ratings
1500
1600
1500
1600
6
20
30
200
3.5
150
鈥?5 to +150
Unit
V
2.7鹵0.3
0.6鹵0.2
5.45鹵0.3
10.9鹵0.5
emitter voltage 2SC5244A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
1
2
3
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
TOP鈥?L Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
2SC5244
2SC5244A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1500V, I
E
= 0
V
CB
= 1600V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10A
I
C
= 10A, I
B
= 2.8A
I
C
= 10A, I
B
= 2.8A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 12A, I
B1
= 2.4A, I
B2
= 鈥?.8A,
Resistance loaded
3
1.5
0.12
2.5
0.2
5
min
typ
max
1
1
50
12
3
1.5
V
V
MHz
碌s
碌s
Unit
mA
碌A(chǔ)
2.0
1.5
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
26.0鹵0.5
10.0
2.0
4.0
3.0
1
1
2
