Transistor
2SC5216
Silicon NPN epitaxial planer type
For high-frequency amplification/oscillation/mixing
Unit: mm
+0.2
2.8
鈥?.3
s
Features
q
q
0.65鹵0.15
+0.25
1.5
鈥?.05
0.65鹵0.15
2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
1.1
鈥?.1
(Ta=25藲C)
Ratings
15
8
3
50
200
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
FB
s
Electrical Characteristics
Parameter
Emitter cutoff current
Collector to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Collector output capacitance
Common emitter reverse transfer capacitance
Power gain
h
FE
ratio
(Ta=25藲C)
Symbol
I
EBO
V
CBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
C
rb
PG
h
FE(RATIO)
Conditions
V
EB
= 2V, I
C
= 0
I
C
= 100碌A(chǔ), I
E
= 0
V
CE
= 4V, I
C
= 2mA
I
C
= 20mA, I
B
= 4mA
V
CE
= 4V, I
C
= 2mA
V
CB
= 10V, I
E
= 鈥?5mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CB
= 6V, I
E
= 0, f = 1MHz
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CE
= 4V, I
C
= 100碌A(chǔ)
V
CE
= 4V, I
C
= 2mA
14
0.6
0.8
0.6
0.7
1.3
1.0
0.4
18
22
1.5
1.9
1.4
15
100
350
0.5
V
V
GHz
pF
pF
dB
min
typ
max
2
Unit
碌A(chǔ)
V
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.8
0.16
鈥?.06
+0.2
+0.1
0.4
鈥?.05
+0.1
High transition frequency f
T
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.95
2.9
鈥?.05
1
1.9鹵0.2
+0.2
0.95
3
1.45
1
1
2
