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DATA SHEET

SILICON TRANSISTOR

2SC5186

NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE

FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

鈥?Low Noise

NF = 1.3 dB

NF = 1.3 dB

TYP.

TYP.

PACKAGE DIMENSIONS

@ V

CE

= 2 V, I

C

= 3 mA, f = 2 GHz

@ V

CE

= 1 V, I

C

= 3 mA, f = 2 GHz

1.6 鹵 0.1

0.8 鹵 0.1

2

1.6 鹵 0.1

1.0

0.2

+0.1

鈥?

0.5

0.3

+0.1

鈥?

0.15

+0.1

鈥?.05

(Units: mm)

鈥?Ultra Super Mini-Mold package

ORDERING INFORMATION

PART

NUMBER

2SC5186

2SC5186-T1

86

0.5

QUANTITY

50 units/box

3 000 units/reel

ARRANGEMENT

Embossed tape, 8 mm wide,

Pin 3 (Collector) facing the perforations.

3

1

evaluation (available in batches of 50).

0.6

*

Contact your NEC sales representatives to order samples for

0.75 鹵 0.05

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

5

3

2

30

90

150

鈥?5 to +150

V

V

V

mA

mW

藲C

藲C

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Caution;

This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12110EJ2V0DS00 (2nd edition)

(Previous No. TC-2483)

Date Published November 1996 N

Printed in Japan

0 to 0.1

漏

1994

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