DATA SHEET
SILICON TRANSISTOR
2SC5185
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
鈥?Low Noise
NF = 1.3 dB
NF = 1.3 dB
TYP.
TYP.
PACKAGE DIMENSIONS
@ V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
@ V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
2.1鹵 0.2
1.25 鹵 0.1
(Units: mm)
鈥?Super Mini-Mold package
ORDERING INFORMATION
2
0.65
0.3
+0.1
鈥?.05
3
2.0 鹵 0.2
(1.25)
0.60
2SC5185-T1
+0.1
鈥?.05
(emitter) facing the perforations
3 000 units/reel
2SC5185-T2
Embossed tape, 8 mm wide,
pins No. 1 (collector) and No. 2
(emitter) facing the perforations
0.9 鹵 0.1
1
evaluation.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
30
90
150
鈥?5 to +150
V
V
V
mA
mW
擄C
擄C
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12109EJ2V0DS00 (2nd edition)
(Previous No. TC-2482)
Date Published November 1996 N
Printed in Japan
0 to 0.1
漏
0.15
+0.1
鈥?.05
* Contact your NEC sales representative to order samples for
0.3
4
0.3
+0.1
鈥?.05
Embossed tape, 8 mm wide,
pins No. 3 (base), and No. 4
0.4
(1.3)
PART
NUMBER
QUANTITY
ARRANGEMENT
0.3
+0.1
鈥?.05
T86
1994