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2SC5183R Datasheet

  • 2SC5183R

  • BJT

  • 21頁(yè)

  • ETC

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上傳產(chǎn)品規(guī)格書

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SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
FEATURES
鈥?LOW NOISE:
1.3 dB AT 2.0 GHz
鈥?LOW VOLTAGE OPERATION
鈥?EASY TO MATCH
鈥?HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 13 GHz
鈥?AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
18 (SOT 343 STYLE)
NE687
SERIES
19 (3 PIN ULTRA SUPER
MINI MOLD)
DESCRIPTION
The NE687 series of NPN epitaxial silicon transistors are
designed for low cost, low noise applications. Excellent perfor-
mance at low voltage/low current makes this series an ideal
choice for portable wireless applications at 1.6, 1.9 and 2.4
GHz. The NE687 die is available in six different low cost plastic
surface mount package styles.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
ELECTRICAL CHARACTERISTICS
(T
A
= 25擄C)
PART NUMBER
1
EIAJ
2
REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
f
T
f
T
NF
MIN
NF
MIN
|S
21e
|
|S
21e
|
h
FE
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
R
TH(J-C)
2
NE68718
2SC5185
18
NE68719
2SC5186
19
NE68730
2SC5184
30
NE68733
2SC5182
33
NE68739/39R
2SC5183/83R
39/39R
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
Gain Bandwidth Product at
V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
Gain Bandwidth Product at
V
CE
= 1 V, I
C
= 10 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 2V, I
C
=20 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 1V, I
C
=10 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 2 V, I
C
= 20 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
GHz
GHz
dB
dB
dB
dB
8
7.5
70
nA
nA
pF
mW
擄C/W
擄C/W
0.3
10
8
13
11
1.3
1.3
11
9
140
100
100
0.6
90
833
0.4
2.0
2.0
8.5
6
70
9
7
11
9
1.3
1.3
10
7.5
140
100
100
0.8
90
1250
0.4
2.0
2.0
7
6
70
9
7
11
9
1.3
1.3
8.5
7.5
140
100
100
0.8
90
833
0.4
2.0
2.0
7
6
70
9
7
12
10
1.3
1.3
8.5
7.5
140
100
100
0.8
90
625
0.4
2.0
2.0
7.5
7
70
7.5
7
10
8.5
1.3
1.3
10
8.5
140
100
100
0.8
90
625
2.0
2.0
2
Notes:
3. Pulsed measurement, PW
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2%.
1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal
2. Electronic Industrial Association of Japan.
of the 3 terminal capacitance bridge.
California Eastern Laboratories

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