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2SC5183R-T1 Datasheet

  • 2SC5183R-T1

  • TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-143

  • 96.86KB

  • 8頁

  • ETC

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DATA SHEET
SILICON TRANSISTOR
2SC5183R
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
鈥?/div>
Low noise
NF = 1.3 dB TYP. @V
CE
= 2 V, I
C
= 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
SOT-143 style (Pins for overseas use are assigned to the 2SC5183.)
PACKAGE DRAWINGS
(Units: mm)
0.4
+0.1
鈥?.05
3
4
5藲
0 to 0.1
5藲
0.16
+0.1
鈥?.06
0.4
+0.1
鈥?.05
(1.9)
2.8
+0.2
鈥?.3
1.5
+0.2
鈥?.1
2
0.6
+0.1
鈥?.05
鈥?/div>
4-pin Mini-Mold package
86T
PART NUMBER
2SC5183R-T1
QUANTITY
3000 units/reel
ARRANGEMENT
Embossed tape, 8 mm wide, pins
No. 3 (emitter) and No. 4 (base)
facing the perforations
2.9鹵0.2
(1.8)
0.95 0.85
ORDERING INFORMATION
0.4
+0.1
鈥?.05
1.1
+0.2
鈥?.1
0.8
3. Emitter
4. Base
2SC5183R-T2
3000 units/reel
Embossed tape, 8 mm wide, pins
No. 1 (emitter) and No. 2 (collector)
facing the perforations
Remark
Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄C)
PARAMETER
Collector-to-base voltage
Collector-to-emitter voltage
Emitter-to-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
5
3
2
30
90
150
鈥?5 to +150
UNIT
V
V
V
mA
mW
擄C
擄C
Electrode assignment
1. Emitter
2. Collector
This transistor uses high-frequency technology. Be careful not to allow excessive
current to flow through the transistor, including static electricity.
Document No. TC-2520
(O. D. No. TC-8076)
Date Published April 1995 P
Printed in Japan
1
5藲
5藲
漏
1995

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