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2SC518383R Datasheet

  • 2SC518383R

  • SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

  • 21頁(yè)

  • NEC   NEC

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SURFACE MOUNT NPN SILICON
HIGH FREQUENCY TRANSISTOR
FEATURES
鈥?LOW NOISE:
1.3 dB AT 2.0 GHz
鈥?LOW VOLTAGE OPERATION
鈥?EASY TO MATCH
鈥?HIGH GAIN BANDWIDTH PRODUCT:
f
T
of 13 GHz
鈥?AVAILABLE IN SIX LOW COST PLASTIC SURFACE
MOUNT PACKAGE STYLES
18 (SOT 343 STYLE)
NE687
SERIES
19 (3 PIN ULTRA SUPER
MINI MOLD)
ers
DESCRIPTION
mb ot
T E: a r t n u e n
NO g p
ar
gn.
E
et
AS
in
esi
LE
ow tashe ew d
P
oll
n
f
a
for
he th is d
for ffice
T
ed
om mend ales o
fr
ELECTRICAL CHARACTERISTICS
om call s
rec se
le a ls:
P
tai 30
de 87
E6
N
733
68
NE 8739
NE 6 8 7 3 9 R
E6
N
The NE687 series of NPN epitaxial silicon transistors are
designed for low cost, low noise applications. Excellent perfor-
mance at low voltage/low current makes this series an ideal
choice for portable wireless applications at 1.6, 1.9 and 2.4
GHz. The NE687 die is available in six different low cost plastic
surface mount package styles.
30 (SOT 323 STYLE)
33 (SOT 23 STYLE)
39 (SOT 143 STYLE)
(T
A
= 25擄C)
PART NUMBER
1
EIAJ
2
REGISTERED NUMBER
PACKAGE OUTLINE
NE68718
2SC5185
18
NE68719
2SC5186
19
NE68730
2SC5184
30
NE68733
2SC5182
33
SYMBOLS
f
T
f
T
NF
MIN
NF
MIN
|S
21e
|
2
39R (SOT 143R STYLE)
NE68739/39R
2SC5183/83R
39/39R
PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
GHz
GHz
dB
dB
10
8
13
9
11
9
9
11
9
9
12
7.5
7
10
8.5
1.3
1.3
10
8.5
140
100
100
0.4
0.8
90
625
2.0
2.0
|S
21e
|
h
FE
2
I
CBO
I
EBO
C
RE4
P
T
R
TH(J-A)
R
TH(J-C)
Gain Bandwidth Product at
V
CE
= 2 V, I
C
= 20 mA, f = 2.0 GHz
Gain Bandwidth Product at
V
CE
= 1 V, I
C
= 10 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 2 V, I
C
= 3 mA, f = 2.0 GHz
Minimum Noise Figure at
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 2V, I
C
=20 mA, f = 2.0 GHz
Insertion Power Gain at
V
CE
= 1V, I
C
=10 mA, f = 2.0 GHz
Forward Current Gain
3
at
V
CE
= 2 V, I
C
= 20 mA
Collector Cutoff Current
at V
CB
= 5 V, I
E
= 0 mA
Emitter Cutoff Current
at V
EB
= 1 V, I
C
= 0 mA
Feedback Capacitance at
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
Total Power Dissipation
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
11
7
7
7
10
1.3
1.3
11
9
2.0
2.0
1.3
1.3
10
2.0
2.0
1.3
1.3
2.0
2.0
1.3
1.3
2.0
2.0
dB
dB
8
8.5
6
7
8.5
7
8.5
7.5
7
7.5
70
7.5
6
7.5
6
7.5
140
70
140
70
140
70
140
70
nA
nA
pF
mW
擄C/W
擄C/W
0.3
100
100
0.6
90
833
0.4
100
100
0.8
90
1250
0.4
100
100
0.8
90
833
0.4
100
100
0.8
90
625
Notes:
3. Pulsed measurement, PW
鈮?/div>
350
碌s,
duty cycle
鈮?/div>
2%.
1. Precaution: Devices are ESD sensitive. Use proper handling procedures. 4. The emitter terminal should be connected to the ground terminal
2. Electronic Industrial Association of Japan.
of the 3 terminal capacitance bridge.
California Eastern Laboratories

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