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DATA SHEET

SILICON TRANSISTOR

2SC5183

NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD

PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

FEATURES

鈥?Low Noise

鈥?NF = 1.3 dB

鈥?NF = 1.3 dB

TYP.

TYP.

PACKAGE DIMENSIONS

@ V

CE

= 2 V, I

C

= 3 mA, f = 2 GHz

@ V

CE

= 1 V, I

C

= 3 mA, f = 2 GHz

(Units: mm)

0.4

+0.1

鈥?.05

0.4

+0.1

鈥?.05

3

4

5藲

5藲

5藲

5藲

2.8

+0.2

鈥?.3

1.5

+0.2

鈥?.1

鈥?4-pin Mini-Mold package

EIAJ: SC-61

2.9 鹵 0.2

(1.8)

0.85 0.95

2

T86

ORDERING INFORMATION

PART

NUMBER

2SC5183-T1

1

QUANTITY

ARRANGEMENT

Embossed tape, 8 mm wide,

Pin No. 3 (base) and No. 4 (emitter)

0.6

+0.1

鈥?.05

1.1

+0.2

鈥?.1

3 000 units/reel

2SC5183-T2

Embossed tape, 8 mm wide,

Pins No. 1 (collector) and No. 2

(emitter) facing the perforations

0.8

facing the perforations

PIN CONNECTIONS

*

Contact your NEC sales representatives to order samples for

evaluation (available in batches of 50).

1.

2.

3.

4.

Collector

Emitter

Base

Emitter

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

5

3

2

30

90

150

鈥?5 to +150

V

V

V

mA

mW

藲

C

藲

C

Caution;

This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.

Document No. P12107EJ2V0DS00 (2nd edition)

(Previous No. TC-2480)

Date Published November 1996 N

Printed in Japan

0~0.1

漏

0.16

+0.1

鈥?.06

0.4

+0.1

鈥?.05

(1.9)

1994

next

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