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2SC5180 Datasheet

  • 2SC5180

  • NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE ...

  • 8頁

  • NEC   NEC

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DATA SHEET
SILICON TRANSISTOR
2SC5180
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
鈥?/div>
Low current consumption and high gain
錚琒
21e
錚?/div>
2
= 12 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
PACKAGE DIMENSIONS
(Units : mm)
2.1 鹵 0.2
1.25 鹵 0.1
鈥?/div>
Supper Mini-Mold package
錚琒
21e
錚?/div>
2
= 11 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
0.3
+0.1
鈥?.05
2.0 鹵 0.2
QUANTITY
ARRANGEMENT
Embossed tape, 8 mm wide, pins No. 3
(base) and No. 4 (emitter) facing the
perforations
Embossed tape, 8 mm wide, pins No. 1
(collector) and No. 2 (emitter) facing the
perforations
0.65
(1.25)
2SC5180鈥揟1
3 000 units/reel
2SC5180鈥揟2
0.60
+0.1
鈥?.05
*
Contact your NEC sales representatives to order samples for evaluation (available
in batches of 50).
0.9 鹵 0.1
0.3
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
10
30
150
鈥?5 to +150
V
V
V
mA
mW
擄C
擄C
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12104EJ2V0DS00 (2nd edition)
(Previous No. TC-2477)
Date Published December 1996 N
Printed in Japan
0 to 0.1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
漏
0.15
+0.1
鈥?.05
0.3
+0.1
鈥?.05
0.4
1
4
(1.3)
PART
NUMBER
0.3
+0.1
鈥?.05
ORDERING INFORMATION
2
3
T84
1994

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