NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
鈥?Low Current Consumption and High Gain
|S
21e
|
2
= 9.0 dB TYP. @ V
CE
= 2 V, I
C
= 7 mA, f = 2 GHz
|S
21e
|
2
= 8.5 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
0.4
鈥?.05
+0.1
PACKAGE DIMENSIONS
(Units: mm)
2.8鹵0.2
1.5
0.65
鈥?.15
+0.1
鈥?Mini-Mold package
EIAJ: SC-59
0.95
ORDERING INFORMATION
PART
NUMBER
2SC5177-T1
QUANTITY
3 000 units/reel
ARRANGEMENT
Embossed tape, 8 mm wide, pin
No. 3 (collector) facing the
perforations
2.9鹵0.2
2
T84
0.95
Remark
Contact your NEC sales representatives to order samples
for evaluation (available in batches of 50).
1.1 to 1.4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
5
3
2
10
30
150
鈥?5 to +150
V
V
V
mA
mW
擄C
擄C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
CAUTION;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
NEC
1
2
3
4
5
6
7
8
9
10
11
12
