2SC5161
Transistors
High voltage switching transistor
(400V, 2A)
2SC5161
!
Features
1) Low V
CE(sat)
.
V
CE(sat)
=0.15V (Typ.)
(I
C
/I
B
=1A/0.2A)
2) High breakdown voltage.
V
CEO
=400V
3) Fast switching.
t
f
鈮?.0碌s
(I
C
=0.8A)
!
External dimensions
(Units : mm)
1.5鹵0.3
6.5鹵0.2
5.1
+0.2
鈭?.1
C0.5
2.3
+0.2
鈭?.1
0.5鹵0.1
5.5
+0.3
鈭?.1
0.75
0.9
0.65鹵0.1
0.5鹵0.1
2.3鹵0.2 2.3鹵0.2
1.0鹵0.2
(1) (2) (3)
!
Structure
Three-layer, diffused planar type
NPN silicon transistor
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
400
400
7
2
4
1
10
150
鈭?5~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25擄C)
擄C
擄C
鈭?/div>
Collector power dissipation
Junction temperature
Storage temperature
鈭?/div>
Single pulse Pw=10ms
2.5
9.5鹵0.5
0.9
1.5
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