2SC5161
Transistors
High-Voltage Switching Transistor
(400V, 2A)
2SC5161
!Features
1) Low V
CE
(sat).
V
CE
(sat) = 0.15V (Typ.)
(Ic / I
B
=1A / 0.2A)
2) High breakdown voltage.
BV
CEO
= 400V
3) Fast switching.
tf
鈮?/div>
1.0碌s (Ic = 0.8A)
!
External dimensions
(Units : mm)
2.3+0.2
鈭?.1
0.5鹵0.1
1.5鹵0.3
6.5鹵0.2
5.1+0.2
鈭?.1
C0.5
5.5 +0.3
鈭?.1
0.75
0.9
0.65鹵0.1
0.5鹵0.1
2.3鹵0.2 2.3鹵0.2
1.0鹵0.2
!
Structure
Three - layer, diffused planar type.
NPN silicon transistor.
(1) (2) (3)
ROHM : CPT 3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
!
Absolute maximum
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
* Single pulse Pw=10ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
400
400
7
2
4
1
10
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25藲C)
藲C
藲C
*
2.5
9.5鹵0.5
0.9
1.5
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