Power Transistors
2SC5145
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
10.0鹵0.3
1.5鹵0.1
8.5鹵0.2
6.0鹵0.5
3.4鹵0.3
Unit: mm
1.0鹵0.1
s
Features
q
q
q
q
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
800
800
500
8
10
5
3
40
1.3
150
鈥?5 to +150
Unit
V
V
V
1.5max.
1.1max.
10.5min.
2.0
0.8鹵0.1
0.5max.
2.54鹵0.3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4鹵0.3
1.0鹵0.1
8.5鹵0.2
6.0鹵0.3
10.0鹵0.3
V
A
A
A
W
藲C
藲C
1.5
鈥?.4
2.0
3.0
鈥?.2
4.4鹵0.5
0.8鹵0.1
2.54鹵0.3
R0.5
R0.5
1.1 max.
0 to 0.4
5.08鹵0.5
1
2
3
1:Base
2:Collector
3:Emitter
N Type Package (DS)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
V
CEO(sus)
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO(sus)*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 0.2A, L = 25mH
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 0.6A, I
B2
= 鈥?0.6A,
V
CC
= 200V
8
1
3
1
500
15
8
1
1.5
V
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
Unit
碌A(chǔ)
碌A(chǔ)
V
Test circuit
50/60Hz
mercury relay
L 25mH
120鈩?/div>
6V
1鈩?/div>
15V
X
Y
G
4.4鹵0.5
14.7鹵0.5
+0.4
+0
1
1
2
3
