2SC5124
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5124
1500
800
6
10(
Pulse
20)
5
100(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25擄C)
2SC5124
100
max
1
max
100
max
800
min
8
min
4 to 9
5
max
1.5
max
3
typ
130
typ
Unit
碌
A
mA
碌
A
V
s
Electrical Characteristics
Symbol
I
CBO1
I
CBO2
I
EBO
V
(BR)CEO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=1200V
V
CB
=1500V
V
EB
=6V
I
C
=10mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=8A
I
C
=8A, I
B
=2A
I
C
=8A, I
B
=2A
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
External Dimensions
FM100(TO3PF)
0.8
鹵0.2
15.6
鹵0.2
5.5
鹵0.2
3.45
鹵0.2
5.5
酶3.3
鹵0.2
1.6
23.0
鹵0.3
9.5
鹵0.2
a
b
V
V
MHz
pF
19.1
16.2
1.75
2.15
1.05
+0.2
-0.1
5.45
鹵0.1
5.45
鹵0.1
4.4
1.5
0.65
+0.2
-0.1
3.3
0.8
3.35
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
33.3
I
C
(A)
6
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
1.2
I
B2
(A)
鈥?.4
t
on
(
碌
s)
0.1typ
t
stg
(
碌
s)
4.0typ
t
f
(
碌
s)
0.2typ
1.5
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
A
2.4
V
CE
(sat)鈥揑
C
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s at)
( V )
3
I
C /
I
B
= 5 :1
C o l l ec t or C u r r e n t I
C
( A )
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
10
( V
CE
=5 V )
10
1 .8 A
8
C ol l e c t o r C u r r e nt I
C
( A)
8
1 .2 A
2
6
70 0m A
6
4
30 0m A
4
1
2
I
B
=100m A
2
0
0
1
2
3
4
0
0.02
0.05
0 .1
0. 5
1
5
10
0
0
0.5
B a s e - Em i t t o r Vo l t a g e V
B E
( V)
1 .0
Co l l ect o r - Em i t te r V ol ta ge V
C E
(V)
C o ll e ct o r C u r r e nt I
C
( A)
h
FE
鈥?I
C
Characteristics
(Typical)
(V
C E
= 5 V )
40
D C C ur r e n t Gai n h
F E
S w i t c hi n g T i m e
t
o n鈥?/div>
t
st g鈥?/div>
t
f
(碌 s)
1 25 藲C
2 5藲 C
10
5
t
s t g
鈥
f
鈥?I
C
Characteristics
(Typical)
t
s tg
胃
j - a
鈥?t Characteristics
V
C C
2 00 V
I
C
: I
B 1
: 鈥?I
B 2
= 5 : 1: 2
1
0.5
t
f
0.1
0.2
10
鈥?55 藲 C
5
3
0.02
0.1
0.5
1
5
10
0. 5
1
C o ll e ct o r Cu r r e nt I
C
( A)
5
10
Co l l ect o r Cur ren t I
C
(A)
Safe Operating Area
(Single Pulse)
30
30
Reverse Bias Safe Operating Area
100
P c 鈥?Ta Derating
10
Col lec to r Cu r r e n t I
C
(A )
5
10
Co llec to r C u r r e n t I
C
(A )
5
M ax im um P ow e r Di s s i p a ti o n P
C
( W )
50
1
0.5
1
0.5
Without Heatsink
Natural Cooling
L=3mH
鈥揑
B2
=1A
Duty:less than 1%
0.1
5
10
50
10 0
5 00
1000
Col l e ct o r- Em i t ter Vo l t ag e V
C E
( V)
0.1
50
10 0
500
10 00
20 00
3.5
0
W i t ho u t H ea t s i nk
0
25
50
75
100
12 5
1 50
C ol l e ct or - Em i t te r Vol t ag e V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( 藲 C )
128
3.0
10
0
碌
s
W
ith
In
fin
ite
he
at
si
nk
SANKEN
1
