Power Transistors
2SC5121
Silicon NPN triple diffusion planar type
For general amplification
8.0
鈥?.1
+0.5
Unit: mm
3.2鹵0.2
q
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
400
400
7
100
70
1.2
150
鈥?5 to +150
Unit
V
V
V
mA
mA
W
藲C
藲C
1
2
3
0.5鹵0.1
0.75鹵0.1
4.6鹵0.2
2.3鹵0.2
0.5鹵0.1
1.76鹵0.1
16.0鹵1.0
1.9鹵0.1
High collector to base voltage V
CBO
High collector to emitter V
CEO
Small collector output capacitance C
ob
TO-126 package, which is fitted to a heat sink without any insu-
lation parts
11.0鹵0.5
蠁3.16鹵0.1
3.05鹵0.1
s
Features
3.8鹵0.3
1:Emitter
2:Collector
3:Base
JEDEC:TO鈥?26(b)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(T
C
=25藲C)
Symbol
I
CBO
Hot I
CEO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 300V, I
E
= 0
V
CE
= 380V, I
B
= 0, Ta = 80擄C
I
C
= 100碌A(chǔ), I
B
= 0
I
E
= 1碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
50
80
4
8
400
7
30
150
1.2
V
MHz
pF
min
typ
max
10
10
Unit
碌A(chǔ)
碌A(chǔ)
V
V
1
1
2
