2SC5071
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5071
500
400
10
12(
Pulse
24)
4
100(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
External Dimensions
MT-100(TO3P)
5.0
鹵0.2
15.6
鹵0.4
9.6
2.0
1.8
4.8
鹵0.2
2.0
鹵0.1
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=500V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=7A
I
C
=7A, I
B
=1.4A
I
C
=7A, I
B
=1.4A
V
CE
=12V, I
E
=鈥?A
V
CB
=10V, f=1MHz
100
max
100
max
400
min
10 to 30
0.5
max
1.3
max
10
typ
105
typ
(Ta=25擄C)
2SC5071
Unit
碌
A
碌
A
19.9
鹵0.3
V
V
V
MHz
pF
4.0
a
b
酶3.2
鹵0.1
20.0min
4.0max
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
28.5
I
C
(A)
7
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.7
I
B2
(A)
鈥?.4
t
on
(
碌
s)
1.0
max
t
stg
(
碌
s)
3.0
max
t
f
(
碌
s)
0.5
max
5.45
鹵0.1
B
C
E
5.45
鹵0.1
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
12
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
( I
C
/I
B
= 5 )
C o l l e c t or - Em i t t e r Sa t u r at i on V ol t ag e V
C E(s at)
(V )
B as e- Em i t t e r Sa t ur at i on Vo l ta g e V
B E(s at)
( V)
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
( V
CE
=4 V )
12
1A
10
C ol l e c t o r C ur r en t I
C
( A )
800mA
60 0m A
10
V
B E
( s at )
1
鈥?5藲C (Case
Temp)
C o l l ec t or C u r r e n t I
C
( A)
8
400 mA
8
6
25藲C (Ca
125藲C
(C
se Temp
)
6
)
emp
se T
(Ca
鈥?5藲
Te
mp
(Ca
se
I
B
=100mA
2
V
C E
( s at )
0
0 .0 2
0 . 0 5 0 .1
0. 5
1
5
鈥?
5藲
C
0
0
1
2
3
4
10
0
0
0.5
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
12
5
12
2
25藲C
5藲
藲C
C
C (C
(C
ase T
4
200mA
as
e
25
Temp
)
藲C
4
Co l l ec t or - Emi t te r V ol ta ge V
C E
(V)
C ol l ec t or C ur r en t I
C
( A)
(V
C E
= 4 V )
40
12 5藲 C
D C C u r r e n t G ai n h
FE
Sw i t c h i n g T i m e
t
o n鈥?/div>
t
st g鈥?/div>
t
f
(
碌
s )
5
V
CC
2 0 0 V
I
C
: I
B1
: I
B 2
=1 0: 1 :鈥?2
1
0 .5
t
f
t
s tg
Transient Thermal Resistance
胃
j- a
( 藲 C / W )
h
FE
鈥?I
C
Characteristics
(Typical)
t
o n
鈥
s tg
鈥?t
f
鈥?I
C
Characteristics
(Typical)
胃
j- a
鈥?t Characteristics
3
2 5藲 C
鈥?30 藲 C
1
0.5
10
8
0. 02
0.05
0.1
0 .5
1
5
10 12
0 .1
0.5
t
on
1
C ol l ec t or C ur r en t I
C
( A)
5
10 12
0.3
1
10
Time t(ms)
10 0
emp
emp)
ase T
)
)
1.0
10 0 0
Co l le ct o r C u rre nt I
C
(A )
Safe Operating Area
(Single Pulse)
30
10
0
碌
s
Reverse Bias Safe Operating Area
30
1 00
Pc 鈥?Ta Derating
10
Co lle cto r C ur re n t I
C
( A )
Co lle cto r C u r r e nt I
C
( A)
5
10
5
Ma x imu m P ow e r D i s s i p a ti o n P
C
(W )
W
ith
In
fin
ite
he
50
at
si
nk
1
0.5
Without Heatsink
Natural Cooling
1
0 .5
Without Heatsink
Natural Cooling
L=3mH
I
B 2
= 1. 0 A
D u t y: l es s t ha n 1 %
0.1
5
10
50
1 00
500
0 .1
5
10
50
100
5 00
3 .5
0
W i t h ou t H ea t s i n k
0
25
50
75
100
125
150
Co ll e ct o r- Em i t ter Vo l t ag e V
C E
( V)
C ol l e ct or - Em i t te r Vol t ag e V
C E
( V)
A m b i e n t T em p er at u r e T a ( 藲 C )
124
SANKEN
1
