Power Transistors
2SC5032
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.6鹵0.2
s
Features
q
q
q
q
q
蠁3.2鹵0.1
9.9鹵0.3
2.9鹵0.2
4.1鹵0.2 8.0鹵0.2
Solder Dip
13.7
鈥?.2
+0.5
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
(T
C
=25藲C)
Ratings
500
500
400
7
6
3
1.2
30
2
150
鈥?5 to +150
Unit
V
15.0鹵0.3
3.0鹵0.2
1.2鹵0.15
1.45鹵0.15
0.75鹵0.1
2.54鹵0.2
5.08鹵0.4
1 2 3
2.6鹵0.1
0.7鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
7擄
V
V
V
A
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
TO鈥?20E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1.2A
I
C
= 1.5A, I
B
= 0.3A
I
C
= 1.5A, I
B
= 0.3A
V
CE
= 10V, I
C
I
C
= 1.5A, I
B1
= 0.15A, I
B2
= 鈥?0.3A,
V
CC
= 200V
10
1.0
3.0
0.3
400
10
8
40
1.0
1.5
V
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
Unit
碌A
碌A
V
1
1
2
3
