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DATA SHEET

SILICON TRANSISTOR

2SC5009

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5009 is an NPN epitaxial silicon transistor designed for use

in low noise and small signal amplifiers from VHF band to L band. Low

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface process (NEST3 process) which is an NEC

proprietary new fabrication technique.

1.6鹵 0.1

1.0

PACKAGE DIMENSIONS

in milimeters

1.6鹵 0.1

0.8鹵 0.1

2

0.2

+0.1

鈥?

0.5

0.3

+0.1

鈥?

0.15

+0.1

鈥?.05

0.5

FEATURES

鈥?Low Voltage Use.

鈥?High f

T

鈥?Low C

re

鈥?Low NF

鈥?High

: 12.0 GHz TYP. (@ V

CE

= 3 V, I

C

= 5 mA, f = 2 GHz)

: 0.3 pF TYP. (@ V

CE

= 3 V, I

E

= 0, f = 1 MHz)

8.5 dB TYP. (@ V

CE

= 3 V, I

C

= 5 mA, f = 2 GHz)

: 2.5 dB TYP. (@ V

CE

= 3 V, I

C

= 3 mA, f = 2 GHz)

3

1

鈥?Ultra Super Mini Mold Package.

0.6

|S

21e

|

2

:

0.75鹵 0.05

ORDERING INFORMATION

PART

NUMBER

2SC5009

2SC5009-T1

QUANTITY

50 pcs./Unit

3 kpcs./Reel

PACKING STYLE

Embossed tape 8 mm wide.

Pin 3 (Collector) face to perforation side

of the tape.

1. Emitter

2. Base

3. Collector

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

9

6

2

10

60

150

鈥?5 to +150

V

V

V

mA

mW

藲C

藲C

Document No. P10388EJ2V0DS00 (2nd edition)

(Previous No. TD-2430)

Date Published July 1995 P

Printed in Japan

0 to 0.1

漏

1993

next

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