PDF預(yù)覽

• 1
• 2
• 3
• 4
• 5
• 6
• 7
• 8
• 9
• 10

DATA SHEET

SILICON TRANSISTOR

2SC5009

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5009 is an NPN epitaxial silicon transistor designed for use

in low noise and small signal amplifiers from VHF band to L band. Low

noise figure, high gain, and high current capability achieve a very wide

dynamic range and excellent linearity. This is achieved by direct nitride

passivated base surface process (NEST3 process) which is an NEC

proprietary new fabrication technique.

1.6鹵 0.1

1.0

PACKAGE DIMENSIONS

in milimeters

1.6鹵 0.1

0.8鹵 0.1

2

0.2

+0.1

鈥?

0.5

0.3

+0.1

鈥?

0.15

+0.1

鈥?.05

0.5

FEATURES

鈥?Low Voltage Use.

鈥?High f

T

鈥?Low C

re

鈥?Low NF

鈥?High

: 12.0 GHz TYP. (@ V

CE

= 3 V, I

C

= 5 mA, f = 2 GHz)

: 0.3 pF TYP. (@ V

CE

= 3 V, I

E

= 0, f = 1 MHz)

8.5 dB TYP. (@ V

CE

= 3 V, I

C

= 5 mA, f = 2 GHz)

: 2.5 dB TYP. (@ V

CE

= 3 V, I

C

= 3 mA, f = 2 GHz)

3

1

鈥?Ultra Super Mini Mold Package.

0.6

|S

21e

|

2

:

0.75鹵 0.05

ORDERING INFORMATION

PART

NUMBER

2SC5009

2SC5009-T1

QUANTITY

50 pcs./Unit

3 kpcs./Reel

PACKING STYLE

Embossed tape 8 mm wide.

Pin 3 (Collector) face to perforation side

of the tape.

1. Emitter

2. Base

3. Collector

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

9

6

2

10

60

150

鈥?5 to +150

V

V

V

mA

mW

藲C

藲C

Document No. P10388EJ2V0DS00 (2nd edition)

(Previous No. TD-2430)

Date Published July 1995 P

Printed in Japan

0 to 0.1

漏

1993

next

2SC5009-T1相關(guān)型號(hào)PDF文件下載

• 型號(hào)
  版本
  描述
  廠商
  下載
• 2SC503
  英文版
  TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 600MA I(C) | TO-39
  ETC
  2SC503
• 2SC504
  英文版
  TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 600MA I(C) | TO-39
  ETC
  2SC504
• 2SC505
  英文版
  High Voltage Transistors
  ETC
  2SC505
• 2SC505
  英文版
  High Voltage Transistors
  ETC [ETC]
  2SC505
• 2SC506
  英文版
  High Voltage Transistors
  ETC
  2SC506
• 2SC506
  英文版
  High Voltage Transistors
  ETC [ETC]
  2SC506
• 2SC507
  英文版
  High Voltage Transistors
  ETC
  2SC507
• 2SC507
  英文版
  High Voltage Transistors
  ETC [ETC]
  2SC507
• 2SC508
  英文版
  Silicon NPN Power Transistors
  ISC [Incha...
  2SC508
• 2SC510
  英文版
  TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-39
  ETC
  2SC510
• 2SC512
  英文版
  TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-39
  ETC
  2SC512
• 2SC515
  英文版
  Silicon NPN Power Transistors
  ISC [Incha...
  2SC515
• 2SC517
  英文版
  TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-37
  ETC
  2SC517
• 2SC522
  英文版
  TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1.5A I(C) | TO-37VA...
  ETC
  2SC522
• 2SC524
  英文版
  TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1.5A I(C) | TO-37VAR
  ETC
  2SC524
• 2SC526
  英文版
  ETC [High Voltage Transistors]
  ETC
  2SC526
• 2SC535
  英文版
  Silicon NPN Triple Diffused
  hitachi
  2SC535
• 2SC536
  英文版
  TRANSISTOR (NPN)
  ETC
  2SC536
• 2SC536
  英文版
  TO-92 Plastic-Encapsulate Transistors
  江蘇長(zhǎng)電
  2SC536
• 2SC537
  英文版
  TRANSISTOR | BJT | NPN | 100MA I(C) | TO-106VAR
  ETC
  2SC537

您可能感興趣的PDF文件資料

• 2SC5200
• 2SC5200RTU
• 2SC5198
• 2SC5053T100R
• 2SC5103TLQ
• 2SC5200
• 2SC5201
• 2SC5201_06
• 2SC5353
• 2SC5508
• 2SC5548A
• 2SC5144

熱門IC型號(hào)推薦

• 2SC5103
• 2SJ366
• 2DA1797-13
• 2SK1875-V
• 2SB1188-R
• 2SC5886
• 2SK2615
• 2SC2757-T1B
• 2DB1188Q-13
• 2SA1242-Y
• 2SC3303-Y
• 2SK3301