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DATA SHEET

SILICON TRANSISTOR

2SC5007

NPN SILICON EPITAXIAL TRANSISTOR

3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION

The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from

VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which

is an NEC proprietary fabrication technique.

FEATURES

鈥?Low Voltage Use.

鈥?High f

T

鈥?Low C

re

鈥?Low NF

: 7.0 GHz TYP. (@ V

CE

= 3 V, I

C

= 7 mA, f = 1 GHz)

: 0.45 pF TYP. (@ V

CE

= 3 V, I

E

= 0, f = 1 MHz)

: 1.4 dB TYP. (@ V

CE

= 3 V, I

C

= 7 mA, f = 1 GHz)

2

0.5

1.6 鹵 0.1

1.0

0.2

+0.1

鈥?

0.3

+0.1

鈥?

0.15

+0.1

鈥?.05

PACKAGE DIMENSIONS

in millimeters

1.6 鹵 0.1

0.8 鹵 0.1

鈥?High |S

21e

|

2

: 12 dB TYP. (@ V

CE

= 3 V, I

C

= 7 mA, f = 1 GHz)

鈥?Ultra Super Mini Mold Package.

0.5

ORDERING INFORMATION

PART

NUMBER

2SC5007

2SC5007-T1

3

1

QUANTITY

50 pcs./Unit

3 kpcs./Reel

PACKING STYLE

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation side

of the tape.

0.75 鹵 0.05

0.6

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs.

1. Emitter

2. Base

3. Collector

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

20

10

1.5

65

125

150

鈥?5 to +150

V

V

V

mA

mW

藲C

藲C

Document No. P10386EJ2V0DS00 (2nd edition)

(Previous No. TD-2400)

Date Published July 1995 P

Printed in Japan

0 to 0.1

漏

1993

next

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