Power Transistors
2SC4986
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
7.5鹵0.2
Unit: mm
4.5鹵0.2
10.8鹵0.2
s
Features
q
q
q
3.8鹵0.2
High collector to base voltage V
CBO
High collector to emitter V
CEO
Allowing automatic insertion with radial taping
90擄
0.65鹵0.1
0.85鹵0.1
2.5鹵0.1
1.0鹵0.1
0.8C
0.7鹵0.1
0.7鹵0.1
0.8C
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
500
400
7
4
2
1.5
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
16.0鹵1.0
0.5鹵0.1
2.5鹵0.2
0.8C
2.5鹵0.2
0.4鹵0.1
2.05鹵0.2
1
2
3
1:Emitter
2:Collector
3:Base
MT3 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 100mA
V
CE
= 5V, I
C
= 1A
I
C
= 1A, I
B
= 0.2A
I
C
= 1A, I
B
= 0.2A
V
CB
= 10V, I
E
= 鈥?00mA, f = 200MHz
I
C
= 1A, I
B1
= 0.2A, I
B2
= 鈥?0.2A,
V
CC
= 150V
120
1
3
1
15
8
1
1.5
V
V
MHz
碌s
碌s
碌s
min
typ
max
100
100
Unit
碌A(chǔ)
碌A(chǔ)
1
1
2
