Transistor
2SC4968
Silicon NPN epitaxial planer type
For UHF band low-noise amplification
Unit: mm
5.0鹵0.2
4.0鹵0.2
s
Features
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
15
10
2
80
600
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
2.54鹵0.15
1 2 3
0.45
鈥?.1
1.27
+0.2
13.5鹵0.5
Low noise figure NF.
High gain.
High transition frequency f
T
.
5.1鹵0.2
0.45
鈥?.1
1.27
+0.2
2.3鹵0.2
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?2
EIAJ:SC鈥?3A
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 100碌A(chǔ), I
B
= 0
V
CE
= 8V, I
C
= 20mA
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
V
CE
= 8V, I
C
= 20mA, f = 800MHz
10
15
10
50
5
150
6
0.7
13.5
15
2
1.2
300
GHz
pF
dB
dB
dB
min
typ
max
1
1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
1
1
2
