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2SC4959 Datasheet

  • 2SC4959

  • NEC [HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXI...

  • NEC   NEC

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DATA SHEET
SILICON TRANSISTOR
2SC4959
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
Low Noise, High Gain
Low Voltage Operation
Low Feedback Capacitance
C
re
= 0.4 pF TYP.
PACKAGE DIMENSIONS
in millimeters
2.1
鹵
0.1
1.25
鹵
0.1
2.0
鹵
0.2
0.3
+0.1
鈥?
0.65 0.65
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perfora-
tion side of the tape.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face
to perforation side of the tape.
2
0.3
+0.1
鈥?
0.15
+0.1
鈥?.05
1
3
2SC4959鈥揟1
3 Kpcs/Reel.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959)
0.9
鹵
0.1
2SC4959鈥揟2
3 Kpcs/Reel.
0.3
Marking
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
擄
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
9
6
2
30
150
150
鈥?5 to +150
V
V
V
mA
mW
擄C
擄C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution;
Electrostatic sensitive Device.
Document No. P10382EJ2V0DS00 (2nd edition)
(Previous No. TD-2410)
Date Published July 1995 P
Printed in Japan
The mark
5
shows revised points.
0 to 0.1
漏
1995
1992

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