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DATA SHEET

SILICON TRANSISTOR

2SC4956

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

4 PINS MINI MOLD

FEATURES

鈥?Low Noise, High Gain

鈥?Low Voltage Operation

鈥?Low Feedback Capacitance

C

re

= 0.20 pF TYP.

0.4

+0.1

鈥?.05

0.4

+0.1

鈥?.05

3

4

5藲

2.8

+0.2

鈥?.3

1.5

+0.2

鈥?.1

PACKAGE DIMENSIONS

in millimeters

ORDERING INFORMATION

PART

NUMBER

2SC4956-T1

3 Kpcs/Reel.

Embossed tape 8 mm wide.

Pin3 (Base), Pin4 (Emitter) face to perforation

side of the tape.

1

0.6

+0.1

鈥?.05

5藲

1.1

+0.2

鈥?.1

2SC4956-T2

3 Kpcs/Reel.

5藲

0 to 0.1

5藲

*

Please contact with responsible NEC person, if you require evaluation

sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)

PIN CONNECTIONS

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

9

6

2

10

60

150

鈥?5 to +150

V

V

V

mA

mW

藲C

藲C

1.

2.

3.

4.

Collector

Emitter

Base

Emitter

The information in this document is subject to change without notice.

Caution;

Electrostatic Sensitive Device.

Document No. P10378EJ2V0DS00 (2nd edition)

(Previous No. TD-2407)

Date Published July 1995 P

Printed in Japan

漏

0.16

+0.1

鈥?.06

Embossed tape 8 mm wide.

Pin1 (Collector), Pin2 (Emitter) face to perfora-

tion side of the tape.

0.8

0.4

+0.1

鈥?.05

(1.9)

QUANTITY

PACKING STYLE

2.9 鹵0.2

(1.8)

0.85 0.95

2

1993

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