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DATA SHEET

SILICON TRANSISTOR

2SC4955

HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

鈥?Low Noise, High Gain

鈥?Low Voltage Operation

鈥?Low Feedback Capacitance

0.4

鈥?.05

+0.1

PACKAGE DIMENSIONS

in millimeters

2.8鹵0.2

1.5

0.65

鈥?.15

+0.1

Cre = 0.4 pF TYP.

ORDERING INFORMATION

0.95

0.95

PART

NUMBER

2SC4955-T1

QUANTITY

3 Kpcs/Reel.

PACKING STYLE

Embossed tape 8 mm wide.

Pin3 (Collector) face to perforation

side of the tape.

2.9鹵0.2

2

3

2SC4955-T2

3 Kpcs/Reel.

*

Please contact with responsible NEC person, if you evaluation

sample. Unit sample quantity shall be 50 pcs.

(Part No.: 2SC4955)

1.1 to 1.4

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 藲C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

V

CBO

V

CEO

V

EBO

I

C

P

T

T

j

T

stg

9

6

2

30

180

150

鈥?4 to +150

V

V

V

mA

mW

藲C

藲C

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

Document No. P10377EJ2V0DS00 (2nd edition)

(Previous No. TD-2406)

Date Published July 1995 P

Printed in Japan

0 to 0.1

漏

0.16

鈥?.06

+0.1

Embossed tape 8 mm wide.

Pin1 (Emitter), Pin2 (Base) face to

perforation side of the tape.

Marking

0.3

+0.1

1

0.4

鈥?.05

1993

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