DATA SHEET
SILICON TRANSISTOR
2SC4955
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
鈥?Low Noise, High Gain
鈥?Low Voltage Operation
鈥?Low Feedback Capacitance
0.4
鈥?.05
+0.1
PACKAGE DIMENSIONS
in millimeters
2.8鹵0.2
1.5
0.65
鈥?.15
+0.1
Cre = 0.4 pF TYP.
ORDERING INFORMATION
0.95
0.95
PART
NUMBER
2SC4955-T1
QUANTITY
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation
side of the tape.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to
perforation side of the tape.
2.9鹵0.2
2
3
2SC4955-T2
3 Kpcs/Reel.
Marking
0.3
*
To order evaluation samples, contact your nearby sales office.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4955)
1.1 to 1.4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
9
6
2
30
180
150
鈥?4 to +150
V
V
V
mA
mW
藲C
藲C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10038EJ01V0DS (1st edition)
(Previous No. P10377EJ2V0DS00)
Date Published October 2001 CP(K)
Printed in Japan
The mark
shows major revised points.
錚?/div>
NEC Corporation 1993
錚?/div>
NEC Compound Semiconductor Devices 2001
0 to 0.1
0.16
鈥?.06
+0.1
+0.1
1
0.4
鈥?.05
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