2SC4907
Silicon NPN Triple Diffused Planar Transistor
(High Voltage and High Speed Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC4907
600
500
10
6(
Pulse
12)
2
30(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Switching Regulator and General Purpose
External Dimensions
FM20(TO220F)
4.0
鹵0.2
10.1
鹵0.2
4.2
鹵0.2
2.8 c0.5
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=600V
V
EB
=10V
I
C
=25mA
V
CE
=4V, I
C
=2A
I
C
=2A, I
B
=0.4A
I
C
=2A, I
B
=0.4A
V
CE
=12V, I
E
=鈥?.5A
V
CB
=10V, f=1MHz
1
max
100
max
500
min
10to30
0.5
max
1.3
max
8
typ
45
typ
(Ta=25擄C)
2SC4907
Unit
mA
V
V
V
MHz
pF
16.9
鹵0.3
8.4
鹵0.2
碌
A
13.0min
1.35
鹵0.15
1.35
鹵0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
鹵0.2
2.4
鹵0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
R
L
(鈩?
100
I
C
(A)
2
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.2
I
B2
(A)
鈥?.4
t
on
(
碌
s)
1
max
t
stg
(
碌
s)
4.5
max
t
f
(
碌
s)
0.5
max
2.54
3.9
B C E
I
C
鈥?V
C E
Characteristics
(Typical)
6
1A
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C o l l ec to r - Em i t t er S a t ur a t i o n Vo l ta g e V
CE (sa t)
(V )
B as e - Em i t t e r Sa t u r at i on V ol t ag e V
BE (sa t)
( V )
2
( I
C
/ I
B
= 5 )
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
6
( V
CE
= 4V )
80 0m A
5
C o l l e c t o r Cu r r e n t I
C
( A )
600 mA
5
C o l l ec t or C u r r e n t I
C
( A )
4
400 mA
4
300 mA
3
200m A
V
B E
( s at )
1
鈥?5藲C
(Case Temp)
Temp)
)
3
ase
Tem
p)
p)
se
Te
m
Ca
C(
125
藲
I
B
=100mA
1
V
C E
( s a t)
0
0.02
0.05 0 . 1
s
(Ca
125藲C
eT
5
鈥?
藲C
0
0
1
2
3
4
0 .5
1
5
0
0
0.2
0.4
0. 6
25藲C
0 .8
鈥?5藲
em
1
C (C
(Ca
(Ca
125藲C
p)
se T
2
25藲C (Case
p
se Tem
25藲C
2
emp
)
鹵0.2
0.8
鹵0.2
a
b
酶3.3
鹵0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
1.0
1. 2
1.4
C ol l ec t or - Emi t t er Vo l ta ge V
C E
(V )
C ol l ec t or C ur r en t I
C
( A)
B as e- Em i t t o r Vo l t a g e V
BE
( V )
( V
CE
= 4 V )
50
D C C u r r e n t G ai n h
FE
Sw i t c hi n g T i m e
t
on鈥?/div>
t
st g鈥?/div>
t
f
(
碌
s )
7
5
V
CC
2 0 0 V
I
C
: I
B1
: I
B 2
=1 0: 1 :鈥?2
1
0 .5
t
s tg
Transient Thermal Resistance
胃
j- a
( 藲C /W )
h
F E
鈥?I
C
Characteristics
(Typical)
t
o n
鈥
s t g
鈥?t
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
4
125藲C
25藲C
鈥?5 藲C
1
10
t
on
0.5
0.3
t
f
0 .1
0 .2
0 .5
1
5
6
5
0.02
0.05
0.1
0.5
1
5 6
1
10
T i m e t( m s )
1 00
1000
C ol l ec t or Cur ren t I
C
( A)
Co l le c to r Cu r r e n t I
C
( A)
Safe Operating Area
(Single Pulse)
20
10
5
Co llec t o r C u r r e n t I
C
( A)
10
0
碌
Reverse Bias Safe Operating Area
20
10
5
30
P c 鈥?Ta Derating
s
M a xim u m P o we r D i s s i p a t i o n P
C
( W )
W
ith
Co llec t o r C u r r e n t I
C
( A)
20
In
fin
ite
he
at
si
1
1
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.5A
Duty:less than 1%
nk
0.5
Without Heatsink
Natural Cooling
0.5
10
W i t h o ut H e at s i n k
2
0.1
10
50
10 0
50 0
1000
0.1
10
50
1 00
5 00
1 0 00
0
0
25
50
75
100
12 5
1 50
Co l le ct o r - Em i t te r V ol ta ge V
C E
(V )
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
Am bi e nt T e m p e r a t u r e T a ( 藲 C )
120
SANKEN
1
