Power Transistors
2SC4892
Silicon NPN triple diffusion planar type
For power switching
Unit: mm
s
q
q
q
q
5.0鹵0.1
Features
High-speed switching
High collector to base voltage V
CBO
Satisfactory linearity of foward current transfer ratio h
FE
Allowing supply with the radial taping
13.0鹵0.2
4.2鹵0.2
10.0鹵0.2
1.0
90擄
2.5鹵0.2
1.2鹵0.1
C1.0
2.25鹵0.2
Absolute Maximum Ratings
(T
C
=25藲C)
Parameter
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25擄C
P
C
T
j
T
stg
Ratings
900
900
800
7
2
1
0.3
15
2
150
鈥?5 to +150
Unit
V
V
V
V
A
A
A
W
藲C
藲C
18.0鹵0.5
Solder Dip
s
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Junction temperature
Storage temperature
C1.0
1 2 3
2.5鹵0.2
2.5鹵0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 900V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 5V, I
C
= 0.05A
V
CE
= 5V, I
C
= 0.5A
I
C
= 0.2A, I
B
= 0.04A
I
C
= 0.2A, I
B
= 0.04A
V
CE
= 10V, I
C
= 0.05A, f = 1MHz
I
C
= 0.2A, I
B1
= 0.04A, I
B2
= 鈥?0.08A,
V
CC
= 250V
4
1
3
1
800
6
3
1.5
1
V
V
MHz
碌s
碌s
碌s
min
typ
max
50
50
Unit
碌A(chǔ)
碌A(chǔ)
V
1
1
2
3
