DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC4885
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS SUPER MINI MOLD
FEATURES
鈥?Excellent Low NF in Low Frequency Band
鈥?Low Voltage Use
鈥?Low C
ob
: 0.9 pF TYP.
鈥?Low Noise Voltage : 90 mV TYP.
2.0鹵0.2
PACKAGE DIMENSIONS
(Units: mm)
2.1鹵0.1
1.25鹵0.1
鈥?Super Mini Mold Package. EIAJ : SC-70
0.3
鈭?
0.65 0.65
+0.1
2
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
55
25
13
3.0
50
120
125
to +125
V
V
mA
mW
C
C
0.9鹵0.1
0.3
V
Marking
0.15
鈭?.05
+0.1
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
a
= 25
C)
PARAMETER
Collector Cutoff Current
Emitter Cutoff Current
Collector to Base Saturation Voltage
DC Current Gain
Gain Bandwidth Product
Collecter Capacitance
Insertion Power Gain
Noise Figure
Noise Voltage
SYMBOL
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
C
ob
60
2.5
3.5
0.8
7.0
9.0
3.0
90
200
1.2
MIN.
TYP.
MAX.
0.1
0.1
0.3
150
GHz
pF
dB
dB
mV
UNIT
TEST CONDITIONS
V
CB
= 15 V, I
E
= 0
V
EB
= 2 V, I
C
= 0
h
FE
= 10, I
C
= 5 mA
V
CE
= 5 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 5 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
See Test Cirucit
*1
A
A
V
S
21e
2
NF
NV
*1
Pulse Measurement PW
350
s, Duty Cycle
2 %
h
FE
Classification
Rank
Marking
h
FE
R13
R13
60 to 150
Document No. P10410EJ2V0DS00 (2nd edition)
(Previous No, TC-2365)
Date Published March 1997 N
Printed in Japan
漏
0 to 0.1
0.3
鈭?
ABSOLUTE MAXIMUM RATINGS (T
a
= 25
C)
+0.1
1
3
1993