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2SC4815 Datasheet

  • 2SC4815

  • NEC [NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCH...

  • NEC   NEC

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON
EPITAXIAL
TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4815 is a power transistor developed for high-speed switching and features low V
CE(sat)
and high h
FE
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
鈥?High h
FE
and low V
CE(sat)
:
V
CE(sat)
鈮?/div>
0.3 V @I
C
= 3.0 A, I
B
= 0.15 A
h
FE
鈮?/div>
100
@V
CE
= 2.0 V, I
C
= 1.0 A
鈥?Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
T
j
T
stg
Ratings
100
60
7.0
5.0
10
2.5
1.8
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
擄C
擄C
* PW
鈮?/div>
300
碌
s, duty cycle
鈮?/div>
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998

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