DATA SHEET
SILICON POWER TRANSISTOR
2SC4813
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4813 is a power transistor developed for high-speed switching and features high h
FE
and low V
CE(sat)
.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
鈥?Low V
CE(sat)
: V
CE(sat)
鈮?/div>
0.3 V
鈥?High h
FE
:
鈥?On-chip dumper-diode
鈥?Auto-mounting possible in radial taping specifications
@I
C
= 3.0 A, I
B
= 30 mA
h
FE
= 450 to 2,000 @V
CE
= 2.0 V, I
C
= 3.0 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
I
B(DC)
P
T
T
j
T
stg
Ta = 25擄C
PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
2%
Conditions
Ratings
100
100
7.0
鹵7.5
鹵10
2.0
1.8
150
鈭?5
to +150
Unit
V
V
V
A
A
A
W
擄C
擄C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15603EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
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