Transistor
2SC4805
Silicon NPN epitaxial planer type
For 2GHz band low-noise amplification
Unit: mm
2.1鹵0.1
s
Features
q
q
0.425
1.25鹵0.1
0.425
High transition frequency f
T
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0鹵0.2
1.3鹵0.1
0.65
3
2
0.9鹵0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
15
10
2
65
150
150
鈥?5 ~+150
Unit
V
V
V
mA
mW
藲C
藲C
0.7鹵0.1
0 to 0.1
0.2鹵0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
3S
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 8V, I
C
= 200mA
*
V
CE
= 8V, I
C
= 15mA, f = 1.5GHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 8V, I
C
= 15mA, f = 1.5GHz
V
CE
= 8V, I
C
= 15mA, f = 1.5GHz
V
CB
= 8V, I
C
= 7mA, f = 1.5GHz
7
50
7.0
120
8.5
0.6
9
10
2.2
*
min
typ
max
1
1
300
0.15
鈥?.05
+0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
0.2
0.3
鈥?
+0.1
Unit
碌A(chǔ)
碌A(chǔ)
GHz
1
pF
dB
dB
3
dB
Pulse measurement
1
1
2
